AL5802LP

Document number: DS37549 Rev. 4 - 2

3 of 10

www.diodes.com

March 2016

© Diodes Incorporated

AL5802LP

Symbol

Characteristics

Values

Unit

Output Voltage Relative to GND

30

V

BIAS Voltage Relative to GND

30

V

LED Voltage Relative to GND

6

V

EN Voltage Relative to GND

6

V

REXT Voltage Relative to GND

6

V

Output Current

150

mA

Operating Temperature

-40 to +150

°C

Storage Temperature

-55 to +150

°C

Note:

5. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for

extended periods of time may reduce device reliability.

Package Thermal Data

Characteristic

Symbol

Value

Unit

0.44

W

284

°C/W

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

Supply Voltage Range

4.5

30

V

OUT Voltage Range

0.8

30

LED Pin Current (Note 7)

10

120

mA

Operating Ambient Temperature Range

-40

+125

°C

Notes

:

6. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout.

7. Subject to ambient temperature, power dissipation and PCB substrate material selection.

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (Notes 8 & 9)

40

—

—

V

Emitter-Base Breakdown Voltage

6.0

—

—

V

Collector Cut-Off Current (Note 9)

—

—

50

nA

Base Cut-Off Current (Note 9)

—

—

50

nA

DC Current Gain

40

70

100

—

—

—

—

—

300

—

Collector-Emitter Saturation Voltage (Note 8)

—

—

0.20

V

Base-Emitter Saturation Voltage

0.65

—

0.85

V

Base-Emitter Turn-On Voltage

0.30

—

1.10

V

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to

the testability of the device changed after packaging multiple dies to form an application circuit.