AL5802LP

Document number: DS37549 Rev. 4 - 2

4 of 10

www.diodes.com

March 2016

© Diodes Incorporated

AL5802LP

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

30

—

—

V

Collector-Emitter Breakdown Voltage (Note 8)

30

—

—

V

Emitter-Base Breakdown Voltage (Note 9)

5.0

—

—

V

Collector Cut-Off Current

—

—

0.5

µA

Emitter Cut-Off Current (Note 9)

—

—

0.5

µA

Collector-Emitter Saturation Voltage (Note 8)

—

—

0.3

V

Base-Emitter Turn-On Voltage

0.30

—

1.10

V

DC Current Gain (Note 8)

100

—

—

—

Input Resistance

—

7

10

13

kΩ

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to

the testability of the device changed after packaging multiple dies to form an application circuit.

Thermal Characteristics

Typical Performance Characteristics

Figure 4 Output Current vs. Rext

Rext (

)

Ω

0

50

100

1

10

100

Vout = 1.4V

Vout = 5.4V

Vbias = 24V