ACST8

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Table 2: Absolute Ratings (limiting values)

Note 1: according to test described by IEC61000-4-5 standard & figure A.

Table 3: Gate Characteristics (maximum values)

Table 4: Thermal Resistance

Table 5: Parameter Description

Symbol

Parameter

Value

Unit

RMS on-state current full cycle sine

wave 50 to 60 Hz

TO-220FPAB

Tcase = 90°C

8

A

TO-220AB /

Tcase = 100°C

8

Non repetitive surge peak on-state current

80

A

85

A

Thermal constraint for fuse selection

tp = 10ms

35

dI/dt

Non repetitive on-state current critical rate of rise

Rate period > 1mn

100

A/µs

Non repetitive line peak pulse voltage

note 1

2

kV

Storage temperature range

- 40 to + 150

°C

Operating junction temperature range

- 40 to + 125

°C

Maximum lead soldering temperature during 10s

260

°C

Symbol

Parameter

Value

Unit

Average gate power dissipation

0.1

W

10

W

1

A

Symbol

Parameter

Value

Unit

Junction to ambient

TO-220FPAB

TO-220AB

60

°C/W

45

°C/W

Junction to case for full cycle sine wave conduction TO-220FPAB

3.5

°C/W

Junction to case for full cycle sine wave conduction

TO-220AB

2.5

°C/W

Parameter Symbol

Parameter description

Gate triggering current

Gate triggering voltage

Non triggering voltage

Holding current

Latching current

On state voltage

On state characteristic threshold voltage

On state characteristic dynamic resistance

Forward or reverse leakage current

dV/dt

Static pin OUT voltage rise

(dI/dt)c

Turn off current rate of decay

Avalanche voltage at turn off