BAT20J datasheet(2/5 Pages) STMICROELECTRONICS

部件名	BAT20J

功能描述	HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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BAT20J

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Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to Ambient (*)

600

°C/W

(*) Mounted on epoxy board without copper heat sink.

THERMAL RESISTANCE

Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

(see note 1)

Tj = 25°C

VR =5V

VR =8V

VR =15V

0.65

0.88

3.00

µA

IR *

Reverse leakage current

Tj = 85°C

VR =5V

VR =8V

VR =15V

120

150

250

VF **

Forward voltage drop

Tj = 25°C

IF =10mA

IF = 100 mA

IF =1A

0.28

0.35

0.54

0.31

0.40

0.62

Pulse test tp = 380 µs,

δ <2%

** Pulse test tp = 5 ms,

δ <2%

Note 1: IR at 23 V and Tj = 25°C is equal to 60 µA typ.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

Diode capacitance

VR =5V

F=1MHz

To evaluate the maximum conduction losses, use the following equations :

P = 0.32 x IF(AV) + 0.23 x IF

(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

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