TLH5713

December 1994

LM113LM313 Reference Diode

General Description

The LM113LM313 are temperature compensated low volt-

age reference diodes They feature extremely-tight regula-

tion over a wide range of operating currents in addition to an

unusually-low breakdown voltage and good temperature

stability

The diodes are synthesized using transistors and resistors

in a monolithic integrated circuit As such they have the

same low noise and long term stability as modern IC op

amps Further output voltage of the reference depends only

on highly-predictable properties of components in the IC so

they can be manufactured and supplied to tight tolerances

Features

Y

Low breakdown voltage 1220V

Y

Dynamic impedance of 03X from 500 mAto20mA

Y

range (LM113) 0 Cto70 C (LM313)

Y

The characteristics of this reference recommend it for use in

bias-regulation circuitry in low-voltage power supplies or in

battery powered equipment The fact that the breakdown

voltage is equal to a physical property of siliconthe ener-

gy-band gap voltagemakes it useful for many tempera-

ture-compensation and temperature-measurement func-

tions

Schematic and Connection Diagrams

Metal Can Package

Order Number

LM113H LM113H883

LM113-1H LM113-1H883

LM113-2H LM113-2H883

or LM313H

See NS Package Number H02A

TLH5713 – 1

Typical Applications

Level Detector for Photodiode

Low Voltage Regulator

Solid tantalum

TLH5713 – 2

C1995 National Semiconductor Corporation

RRD-B30M115Printed in U S A