Absolute Maximum Ratings

If MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

(Note 3)

Power Dissipation (Note 1)

100 mW

Reverse Current

50 mA

Forward Current

50 mA

Storage Temperature Range

b

Lead Temperature

(Soldering 10 seconds)

300 C

Operating Temperature Range

LM113

b

LM313

Parameter

Conditions

Min

Typ

Max

Units

Reverse Breakdown Voltage

LM113LM313

1160

1220

1280

V

LM113-1

1210

122

1232

V

LM113-2

1195

122

1245

V

Reverse Breakdown Voltage

60

15

mV

Change

Reverse Dynamic Impedance

02

10

X

025

08

X

Forward Voltage Drop

067

10

V

RMS Noise Voltage

5

m

V

Reverse Breakdown Voltage

15

mV

Change with Current

Breakdown Voltage Temperature

001

% C

Coefficient

Note 1

For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 CW junction to

case or 440 CW junction to ambient

Note 2

inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 01 mF unless isolated by at

least a 100X resistor as it may oscillate at some currents

Note 3

Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113

Typical Performance Characteristics

Temperature Drift

Reverse Dynamic Impedance

Reverse Characteristics

TLH5713 – 3

2