4

TUSB211, TUSB211I, TUSB211-Q1

SLLSEO0C – MAY 2015 – REVISED JUNE 2016

www.ti.com

Product Folder Links: TUSB211 TUSB211I TUSB211-Q1

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Copyright © 2015–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage range

VCC

–0.3

3.8

V

Voltage range

D1P, D1M, D2P, D2M, RSTN, EQ

–0.3

3.8

V

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±3000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101

(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

3

3.3

3.6

V

Operating free-air temperature [TUSB211]

0

70

°C

Operating free-air temperature [TUSB211I]

–40

85

Operating free-air temperature [TUSB211-Q1]

–40

105

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

RWB

UNIT

12 PINS

Junction-to-ambient thermal resistance

161.6

°C/W

Junction-to-case (top) thermal resistance

63.3

°C/W

Junction-to-board thermal resistance

75.1

°C/W

Junction-to-top characterization parameter

1.9

°C/W

Junction-to-board characterization parameter

75.1

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W