| 数据搜索系统,热门电子元器件搜索 |
|
TUSB522PI 数据表(PDF) 4 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
TUSB522PI 数据表(HTML) 4 Page - Texas Instruments |
|
4 / 21 page ![]() 4 TUSB522P SLLSEV9A – JULY 2016 – REVISED OCTOBER 2016 www.ti.com Product Folder Links: TUSB522P Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Pin Functions (continued) PIN I/O DESCRIPTION NAME NO. DE2 3 I, CMOS Sets the output de-emphasis for Channel 2. 3-state input with integrated pull-up and pull- down resistors. DE2 = Low = 0 dB DE2 = Mid = -3.5 dB DE2 = High = -6.2 dB Note: When OS = Low OS2 4 I, CMOS Sets the output swing (differential voltage amplitude) for Channel 2. 2-state input with an integrated pull down resistor. OS2 = Low = 0.9 mV OS2 = High = 1.1 mV EN_RXD 5 I, CMOS Enable. The device has a 660-kΩ pulldown resistor. Device is active when EN_RXD = High. Drive actively high or install a pullup resistor (recommend 4.7 KΩ) for normal operation. Does reset state machine. RSV 14 I, CMOS Reserved. Can be left as No-connect. VCC 1, 13 P Positive Power Supply. Power Supply is 3.3 V. GND 10, 21, PAD G Ground. PAD must be connected to Ground. Pins 10, 21 can be connected to Ground or left unconnected. NC 6, 7, 18, 24 No Connection. These pins can be tied to any desired voltages including connecting them to GND. (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to the GND terminals. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply Voltage Range(2) VCC –0.5 4 V Voltage Range at any input or output terminal Differential I/O –0.5 1.5 V CMOS Inputs –0.5 4 V Junction temperature, TJ 105 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Main power supply 3 3.3 3.6 V Supply Ramp Requirement 100 ms V(PSN) Supply Noise on VCC Terminals 100 mV TA Operating free-air temperature TUSB522P 0 70 °C TUSB522PI –40 85 °C C(AC) AC coupling capacitor 75 100 200 nF |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |