5

TUSB522P

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SLLSEV9A – JULY 2016 – REVISED OCTOBER 2016

Product Folder Links: TUSB522P

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

TUSB522P

UNIT

RGE (VQFN)

24 PINS

Junction-to-ambient thermal resistance

51.2

°C/W

Junction-to-case (top) thermal resistance

55.9

°C/W

Junction-to-board thermal resistance

28.3

°C/W

Junction-to-top characterization parameter

2.0

°C/W

Junction-to-board characterization parameter

28.3

°C/W

Junction-to-case (bottom) thermal resistance

9.7

°C/W

6.5 Electrical Characteristics, Power Supply

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Average active current

Link in U0 with GEN1 data transmission.

k28.5 pattern at 5 Gbps,

3.5 dB

98

mA

Average current in U2/U3

Link in U2 or U3

1.2

mA

Average current disconnect mode

Link in Disconnect mode

265

µA

Average shutdown current

EN_RXD = L

60

µA

6.6 Electrical Characteristics, DC

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

3-State CMOS Inputs(EQ1/2, DE1/2)

High-level input voltage

V

Mid-level input voltage

V

Low-level input voltage

V

Floating voltage

V

Internal pull-up resistance

410

kΩ

Internal pull-down resistance

240

kΩ

High-level input current

26

µA

Low-level input current

–26

µA

2-State CMOS Input (OS1/2, EN_RXD)

High-level input voltage

V

Low-level input voltage

V

Internal pull-down resistance

660

kΩ

Low-level input current

25

µA

Low-level input current

–10

µA