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SMP80MC-270 数据表(PDF) 3 Page - STMicroelectronics |
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SMP80MC-270 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() SMP80MC-270 3/8 100 50 %IPP t t r p 0 t Symbol Parameter Value Unit Ipp Repetitive peak pulse current: 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs 80 250 100 120 150 250 250 A IFS Fail-safe mode : maximum current (note 1) 8/20 µs5 kA ITSM Non repetitive surge peak on-state current (Sinusoidal) t = 20ms t = 16.6ms t = 0.2s t=2s 28 30 14 7 A I²t I²t value for fusing t = 16.6ms t = 20ms 7.5 7.8 A²s TL Maximum lead temperature for soldering during 10s 260 °C Tstg Tj Storage temperature range Maximum junction temperature -55to+150 150 °C °C Note 1: in fail safe mode, the device acts as a short circuit. ABSOLUTE RATINGS (Tamb = 25°C) Type IRM @VRM max. IR @VR max. Note 1 Dynamic VBO max. Note 2 Static VBO @IBO max. max Note 3 IH min. Note 4 C typ. Note 5 C typ. Note 6 µA V µA V V V mA mA pF pF SMP80MC-270 2 243 50 270 345 335 800 150 15 30 Note 1: IR measured at VR guarantee VBR min ≥ VR Note 4: See functional holding current test circuit 3 Note 2: See functional test circuit 1 Note 5: VR = 50V bias, VRMS=1V, F=1MHz Note 3: See test circuit 2 Note 6:VR = 2V bias, VRMS=1V, F=1MHz ELECTRICAL PARAMETERS (Tamb = 25°C) Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µs tr = 10µs tp = 1000µs |
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