SMP80MC-270

4/8

I

(A)

TSM

0

5

10

15

20

25

30

35

40

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t(s)

F=50Hz

Tj initial = 25°C

Fig. 1: Non repetitive surge peak on-state current

versus overload duration.

I [Tj] / I [Tj=25°C]

HH

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

Tj(°C)

Fig. 3: Relative variation of holding current versus

junction temperature .

V

[Tj] / V

[Tj=25°C]

BO

BO

0.94

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

1.05

1.06

1.07

1.08

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

Tj(°C)

Fig. 4: Relative variation of breakover voltage versus

junction temperature.

I [Tj] / I [Tj=25°C]

RR

1.E+00

1.E+01

1.E+02

1.E+03

25

50

75

100

125

Tj(°C)

V =243V

R

Fig. 5: Relative variation of leakage current versus

reverse voltage applied (typical values).

Z/R

th(j-a)

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

Fig. 6: Variation of thermal impedance junction to

ambient versus pulse duration (Printed circuit board

FR4, SCu=35µm, recommended pad layout).

I (A)

T

10

100

01

2345

678

Tj=25°C

V (V)

T

Fig. 2: On-state voltage versus on-state current

(typical values)