TO-252-2L datasheet(1/2 Pages) ZPSEMI

部件名	TO-252-2L

功能描述	Plastic-Encapsulate MOSFETS

PDF	2 Pages

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制造商	ZPSEMI [ZP Semiconductor]

网页	http://zpsemi.com/

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TO-252-2L Plastic-Encapsulate MOSFETS

CJU10N10

N-Channel Power MOSFET

GENERAL DESCRIPTION

The CJU10N10 provide excellent RDS(ON), low gate charge and

operation with low gate voltages. This device is suitable for use as a

load switch or in PWM applications.

FEATURE

Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

APPLICATION

Power switching application

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

9.6

Pulsed Drain Current

IDM

38.4

A

Single Pulsed Avalanche Energy (note1)

EAS

150

mJ

Thermal Resistance from Junction to Ambient

RθJA

100

℃/W

Junction Temperature

TJ

150

Storage Temperature Range

TSTG

-55 ~+150

Maximum lead temperature for soldering purposes ,

1/8”from case for 5 seconds

TL

260

℃

TO-252-2L

1. GATE

2. DRAIN

3. SOURCE

1 of 2

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CJU10N10

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