℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

100

V

Zero gate voltage drain current

1

µA

Gate-body leakage current

±

100

nA

On characteristics (note2)

Gate-threshold voltage

1.2

2.5

V

Static drain-source on-resistance

0.14

Ω

Forward transconductance

3.5

.

S

Dynamic characteristics (note 3)

Input capacitance

690

Output capacitance

120

Reverse transfer capacitance

90

pF

Switching characteristics (note 3)

Turn-on delay time

11

Turn-on rise time

7.4

Turn-off delay time

35

Turn-off fall time

9.1

ns

Total Gate Charge

15.5

nC

Gate-Source Charge

3.2

nC

Gate-Drain Charge

4.7

nC

Drain-Source Diode Characteristics

Drain-source diode forward voltage (note2)

1.2

V

Continuous drain-source diode forward

current

9.6

A

Pulsed drain-source diode forward current

38.4

A

Notes :

1.

℃.

2.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3.

Guaranteed by design, not subject to production

2 of 2

sales@zpsemi.com

www.zpsemi.com

CJU10N10