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BUL128DB 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BUL128DB
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUL128DB 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL128DB Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL128DB Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BUL128DB
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 0.1A
0.7
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= 4A; IB= 1A
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 0.5A; IB= 0.1A
1.1
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.2
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.3
V
ICES
Collector Cutoff Current
VCE= 700V; VBE= -1.5V
VCE= 700V; VBE= -1.5V,TC= 125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
0.25
mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
8
40
VF
Diode Forward Voltage
IF= 2A
2.5
V
Switching Times, Resistive Load
ts
Storage Time
IC= 2A; VCC= 250V;
IB1= -IB2= 0.4A; tp= 30μs
2.9
μ
s
tf
Fall Time
0.2
μ
s



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