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BUL128DB 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BUL128DB
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUL128DB 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUL128DB Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL128DB Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BUL128DB
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·
Low Collector Saturation Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A
·
Very High Switching Speed
APPLICATIONS
·
Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak tp<5ms
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
4
A
PC
Collector Power Dissipation
TC=25℃
70
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.78
℃
/W
Rth j-A
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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