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TLE8108EM 数据表(PDF) 8 Page - Infineon Technologies AG |
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TLE8108EM 数据表(HTML) 8 Page - Infineon Technologies AG |
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8 / 30 page ![]() Data Sheet 8 Rev. 1.0, 2011-03-23 TLE 8108 EM Smart 8-Channel Low Side Switch General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: Stress above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings 1) Unless otherwise specified: T j = -40°C to +150°C; VDD = 4.5V to 5.5V All voltages with respect to ground, positive current flowing into pin 1) Not subject to production test, specified by design. Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Power Supply 4.1.1 Supply voltage V DD -0.3 5.5 V - 4.1.2 Output voltage for short circuit protection (single pulse) V DS_SC 036 V - Power Stages 4.1.3 Load current I D -0.5 0.5 A - 4.1.4 Voltage at power transistor V DS -0.3 41 V Active Clamped Clamping Energy - Singel Pulse 2) 2) Triangular Pulse Shape (Inductance Discharge): I D(t) = ID(0)×(1 - t / tpulse); 0 < t < tpulse. 4.1.5 Single Clamping Energy per Channel E AS -20 mJ I D = 0.18A 1 Single Pulse Logic Pins 4.1.6 IN1 to IN4; Voltage at input pins V IN -0.3 V DD + 0.3 V 3) 4.1.7 RST; Voltage at reset pin V RST -0.3 V DD + 0.3 V 3) 4.1.8 CS; Voltage at chip select V CS -0.3 V DD + 0.3 V 3) 3) Level must not exceed V DD+0.3V < 5.5V 4.1.9 SCLK; Voltage at serial clock pin V SCLK -0.3 V DD + 0.3 V 3) 4.1.10 SI; Voltage at serial input pin V SI -0.3 V DD + 0.3 V 3) 4.1.11 SO; Voltage at serial output pin V SO -0.3 V DD + 0.3 V 3) Temperatures 4.1.12 Junction Temperature T j -40 150 °C - 4.1.13 Junction Temperature T j -40 165 °C Dynamic Conditions, 100h max total 4.1.14 Storage Temperature T stg -55 150 °C - ESD Susceptibility 4.1.15 ESD Resistivity V ESD -4 4 kV HBM4) 4) ESD susceptibility, HBM according to EIA/JESD 22-A114-F |
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