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TLE8108EM 数据表(PDF) 8 Page - Infineon Technologies AG

部件名 TLE8108EM
功能描述  Smart 8-Channel Low Side Relay Driver with SPI Interface
PDF  30 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLE8108EM 数据表(HTML) 8 Page - Infineon Technologies AG

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Data Sheet
8
Rev. 1.0, 2011-03-23
TLE 8108 EM
Smart 8-Channel Low Side Switch
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Note: Stress above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Absolute Maximum Ratings 1)
Unless otherwise specified:
T
j = -40°C to +150°C; VDD = 4.5V to 5.5V
All voltages with respect to ground, positive current flowing into pin
1) Not subject to production test, specified by design.
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
Power Supply
4.1.1
Supply voltage
V
DD
-0.3
5.5
V
-
4.1.2
Output voltage for short circuit protection
(single pulse)
V
DS_SC
036
V
-
Power Stages
4.1.3
Load current
I
D
-0.5
0.5
A
-
4.1.4
Voltage at power transistor
V
DS
-0.3
41
V
Active Clamped
Clamping Energy - Singel Pulse 2)
2) Triangular Pulse Shape (Inductance Discharge):
I
D(t) = ID(0)×(1 - t / tpulse); 0 < t < tpulse.
4.1.5
Single Clamping Energy
per Channel
E
AS
-20
mJ
I
D = 0.18A
1 Single Pulse
Logic Pins
4.1.6
IN1 to IN4; Voltage at input pins
V
IN
-0.3
V
DD + 0.3
V
3)
4.1.7
RST; Voltage at reset pin
V
RST
-0.3
V
DD + 0.3
V
3)
4.1.8
CS; Voltage at chip select
V
CS
-0.3
V
DD + 0.3
V
3)
3) Level must not exceed
V
DD+0.3V < 5.5V
4.1.9
SCLK; Voltage at serial clock pin
V
SCLK
-0.3
V
DD + 0.3
V
3)
4.1.10
SI; Voltage at serial input pin
V
SI
-0.3
V
DD + 0.3
V
3)
4.1.11
SO; Voltage at serial output pin
V
SO
-0.3
V
DD + 0.3
V
3)
Temperatures
4.1.12
Junction Temperature
T
j
-40
150
°C
-
4.1.13
Junction Temperature
T
j
-40
165
°C
Dynamic
Conditions,
100h max total
4.1.14
Storage Temperature
T
stg
-55
150
°C
-
ESD Susceptibility
4.1.15
ESD Resistivity
V
ESD
-4
4
kV
HBM4)
4) ESD susceptibility, HBM according to EIA/JESD 22-A114-F



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