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ADP7157ARDZ-03-R7 数据表(PDF) 20 Page - Analog Devices |
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ADP7157ARDZ-03-R7 数据表(HTML) 20 Page - Analog Devices |
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20 / 24 page ![]() Data Sheet ADP7157 Rev. A | Page 19 of 23 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 TOTAL POWER DISSIPATION (W) 6400mm2 500mm2 25mm2 TJ MAXIMUM Figure 58. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 25°C 40 50 60 70 80 90 100 110 120 130 0 0.2 0.40.60.81.01.21.41.61.8 TOTAL POWER DISSIPATION (W) 6400mm2 500mm2 25mm2 TJ MAXIMUM Figure 59. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 50°C 80 85 90 95 100 105 110 115 120 125 130 0 0.10.20.30.40.5 0.60.70.80.91.0 TOTAL POWER DISSIPATION (W) TJ MAXIMUM 6400mm2 500mm2 25mm2 Figure 60. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 85°C Thermal Characterization Parameter (ΨJB) When board temperature is known, use the thermal character- ization parameter, ΨJB, to estimate the junction temperature rise (see Figure 61 and Figure 62). Use the board temperature (TB) and the power dissipation (PD) to calculate the maximum junction temperature (TJ) by TJ = TB + (PD × ΨJB) (5) The typical ΨJB value is 29.1°C/W for the 10-lead LFCSP package and 30.1°C/W for the 8-lead SOIC package. 0 20 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TOTAL POWER DISSIPATION (W) TB = 25°C TB = 50°C TB = 65°C TB = 85°C TJ MAXIMUM Figure 61. Junction Temperature vs. Total Power Dissipation for the 10-Lead LFCSP 0 20 40 60 80 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TOTAL POWER DISSIPATION (W) TJ MAXIMUM TB = 25°C TB = 50°C TB = 65°C TB = 85°C Figure 62. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC |
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