DYA3407GD datasheet(2/4 Pages) DYELEC

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ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

P -Channel High Density Trench MOSFET

2of4

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DYA 3407GD

Parameter

Symbol

Condition

Min Typ

Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V , ID = -250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS = -24V , VGS = 0V

-1

Gate-Body Leakage

IGSS

VGS = -20V , VDS = 0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID = -250uA

-1

-1.5

-3

Drain-Source On-State Resistance

RDS(on)

VGS = -10V , ID = -3.7A

mΩ

VGS = -4.5V , ID = -3.0A

Forward Transconductance

gfs

VDS = -15V , ID = -3.5A

10.2

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V , IS = -1.9A

-1.3

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = -15V , VGS = 0V

f = 1.0MHz

490

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = -15V , ID = -1A

VGEN = -10V

RL = 15 Ω

RGEN = 6 Ω

4.4

Rise Time

2.2

Turn-Off Delay Time

tD(OFF)

Fall Time

4.2

Total Gate Charge

VDS = -15V

ID = -1A

VGS = -10V

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

1.4

Note

b. Pulse Test

Pulse width ≤ 300us , Duty Cycle ≤ 2% .

c. Guaranteed by design , not subject to production testing .

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