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DYA3407GD 数据表(PDF) 3 Page - DIYI Electronic Technology Co., Ltd. |
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DYA3407GD 数据表(HTML) 3 Page - DIYI Electronic Technology Co., Ltd. |
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3 / 4 page ![]() TYPICAL CHARACTERISTICS 3of4 www.dyelec.com version:01 P -Channel High Density Trench MOSFET ID= -250uA VGS= -10V ID= -3.7A 20 VGS=5~10V 16 15 VGS=4V 12 12 9 8 6 4 VGS=3V 3 0 0 1 2 3 4 5 6 -VDS , Drain-to-Source Voltage (V) Figure 1. Output Characteristics 0 0 1 2 3 4 5 6 -VGS , Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 1.1 2 1.075 1.75 1.05 1.5 1.025 1.25 1 1 0.975 0.75 0.95 0.5 0.925 -50 -25 0 25 50 75 100 125 Tj , Junction Temperature (°C) 0.25 -50 -25 0 25 50 75 100 125 Tj , Junction Temperature (°C) Figure 3. Breakdown Voltage Variation with Temperature Figure 4. On-Resistance Variation with Temperature 1.3 1.2 1.1 1 10 ID= -250uA VDS= -15V ID= -1A 8 6 0.9 4 0.8 2 0.7 0.6 -50 -25 0 25 50 75 100 125 0 0 2 4 6 8 10 Tj , Junction Temperature (°C) Figure 5. Gate Threshold Variation with Temperature Qg , Total Gate Charge (nC) Figure 6. Gate Charge DYA 3407GD |
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