STL24N60DM2 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STL24N60DM2

功能描述	N-channel 600 V, 0.195 (ohm) typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STL24N60DM2

Electrical ratings

DocID026017 Rev 3

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

9.5

IDM(1)(2)

Drain current (pulsed)

PTOT(1)

Total dissipation at Tcase = 25 °C

125

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1)The value is limited by package

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 15 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD=400 V

(4) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

Notes:

(1)When mounted on FR-4 board of inch², 2oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

160

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