STL24N60DM2 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STL24N60DM2

功能描述	N-channel 600 V, 0.195 (ohm) typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

STL24N60DM2

Electrical characteristics

DocID026017 Rev 3

5/15

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

ISDM(2)

Source-drain current

(pulsed)

VSD(3)

Forward on voltage

VGS = 0 V, ISD = 18 A

1.6

trr

Reverse recovery time

ISD = 18 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: " Test

circuit for inductive load switching

and diode recovery times")

155

Qrr

Reverse recovery

charge

956

IRRM

Reverse recovery

current

12.5

trr

Reverse recovery time

ISD = 18 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: " Test circuit for

inductive load switching and diode

recovery times")

200

Qrr

Reverse recovery

charge

1450

IRRM

Reverse recovery

current

Notes:

(1)The value is limited by package.

(2)Pulse width limited by safe operating area

(3) Pulsed: pulse duration = 300 μs, duty cycle 1.5%

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