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STM8AF5269 数据表(PDF) 69 Page - STMicroelectronics

部件名 STM8AF5269
功能描述  Automotive 8-bit MCU, with up to 128 Kbyte Flash, data EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 to 5.5 V
PDF  125 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AF5269 数据表(HTML) 69 Page - STMicroelectronics

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STM8AF526x/8x/Ax STM8AF6269/8x/Ax
Electrical characteristics
114
Figure 20. HSE oscillator circuit diagram
HSE oscillator critical gm formula
The crystal characteristics have to be checked with the following formula:
Equation 1
where gmcrit can be calculated with the crystal parameters as follows:
Equation 2
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1 = CL2 = C: Grounded external capacitance
Table 32. HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF
Feedback resistor
-
-
220
-
k
Ω
CL1/CL2(1) Recommended load capacitance
-
-
-
20
pF
gm
Oscillator trans conductance
-
5
-
-
mA/V
tSU(HSE)(2) Startup time
VDD is
stabilized
-2.8
-
ms
1. The oscillator needs two load capacitors, CL1 and CL2, to act as load for the crystal. The total load capacitance (CLoad) is
(CL1 * CL2)/(CL1 + CL2). If CL1 = CL2, Cload = CL1/2. Some oscillators have built-in load capacitors, CL1 and CL2.
2. This value is the startup time, measured from the moment it is enabled (by software) until a stabilized 24 MHz oscillation is
reached. It can vary with the crystal type that is used.
gm gmcrit
»
gmcrit
2
Π
×
HSE
f
×
()
2
Rm
×
2Co C
+
()
2
=



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