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STM8AL3166 数据表(PDF) 68 Page - STMicroelectronics |
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STM8AL3166 数据表(HTML) 68 Page - STMicroelectronics |
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68 / 124 page ![]() Electrical parameters STM8AL313x/4x/6x STM8AL3L4x/6x 68/124 DocID18474 Rev 7 IDD(Wait) Supply current in Wait mode CPU not clocked, all peripherals OFF, code executed from Flash, VDD from 1.65 V to 3.6 V HSI fCPU = 125 kHz 0.38 0.55(3) mA fCPU = 1 MHz 0.40 0.60(3) fCPU = 4 MHz 0.50 0.65(3) fCPU = 8 MHz 0.60 0.75(3) fCPU = 16 MHz 0.80 0.90 HSE(4) external clock (fCPU=HSE) fCPU = 125 kHz 0.05 0.10(3) fCPU = 1 MHz 0.10 0.20(3) fCPU = 4 MHz 0.25 0.45(3) fCPU = 8 MHz 0.50 0.65(3) fCPU = 16 MHz 1.00 1.20(3) LSI fCPU = fLSI 0.05 0.10(3) LSE(5) external clock (32.768 kHz) fCPU = fLSE 0.05 0.08(3) 1. All peripherals OFF, VDD from 1.65 V to 3.6 V, HSI internal RC osc., fCPU = fSYSCLK 2. Flash is configured in IDDQ mode in Wait mode by setting the EPM or WAITM bit in the Flash_CR1 register. 3. Data based on characterization results, not tested in production. 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 32. 5. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD HSE) must be added. Refer to Table 33. Table 22. Total current consumption in Wait mode (continued) Symbol Parameter Conditions(1) Typ Max Unit |
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