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STM8AL3166 数据表(PDF) 78 Page - STMicroelectronics |
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STM8AL3166 数据表(HTML) 78 Page - STMicroelectronics |
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78 / 124 page  Electrical parameters STM8AL313x/4x/6x STM8AL3L4x/6x 78/124 DocID18474 Rev 7 Figure 17. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results, not tested in production. Table 35. LSI oscillator characteristics Symbol Parameter (1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Conditions(1) Min Typ Max Unit fLSI Frequency - 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time - - - 200(2) 2. Data guaranteed by design, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 - 11 % |
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