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STM32F303RE 数据表(PDF) 78 Page - STMicroelectronics

部件名 STM32F303RE
功能描述  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F303RE 数据表(HTML) 78 Page - STMicroelectronics

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Electrical characteristics
STM32F303xD STM32F303xE
78/173
DocID026415 Rev 5
Table 28. Typical and maximum VDDA consumption in Stop and Standby modes
Symbol Parameter
Conditions
Typ @VDD (VDD = VDDA)Max(1)
Unit
2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDDA
Supply
current in
Stop mode
Regulator in run/low-
power mode, all
oscillators OFF
1.72 1.85 1.97 2.10 2.25 2.41 10.7
11
12
µA
Supply
current in
Standby
mode
LSI ON and IWDG ON 2.08 2.26 2.43 2.61 2.82 3.05
-
-
-
LSI OFF and IWDG
OFF
1.60 1.73 1.85 1.98 2.13 2.29
3.6
4
6
Supply
current in
Stop mode
Regulator in run/low-
power mode, all
oscillators OFF
1.00 1.02 1.05 1.10 1.16 1.24
-
-
-
Supply
current in
Standby
mode
LSI ON and IWDG ON 1.36 1.43 1.51 1.61 1.74 1.88
-
-
-
LSI OFF and IWDG
OFF
0.88 0.90 0.93 0.98 1.05 1.12
-
-
-
1. Data based on characterization results, not tested in production.
Table 29. Typical and maximum current consumption from VBAT supply
Symbol
Para
meter
Conditions
(1)
Typ @VBAT
Max
@VBAT = 3.6 V(2)
Unit
1.65V
1.8V
2V
2.4V 2.7V
3V
3.3V 3.6V
TA =
25°C
TA =
85°C
TA =
105°C
IDD_VBAT
Backup
domain
supply
current
LSE & RTC
ON; “Xtal
mode” lower
driving
capability;
LSEDRV[1:
0] = '00'
0.48
0.50 0.52 0.58
0.65 0.72 0.80 0.90
1.1
1.5
2.0
µA
LSE & RTC
ON; “Xtal
mode”
higher
driving
capability;
LSEDRV[1:
0] = '11'
0.83
0.86 0.90 0.98
1.03 1.10 1.20 1.30
1.5
2.2
2.9
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Data based on characterization results, not tested in production.



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