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STM32F303RE 数据表(PDF) 93 Page - STMicroelectronics |
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STM32F303RE 数据表(HTML) 93 Page - STMicroelectronics |
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93 / 173 page ![]() DocID026415 Rev 5 93/173 STM32F303xD STM32F303xE Electrical characteristics 151 Figure 19. HSI oscillator accuracy characterization results for soldered parts Low-speed internal (LSI) RC oscillator 6.3.9 PLL characteristics The parameters given in Table 42 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 19. Table 41. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz tsu(LSI)(2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDD(LSI)(2) LSI oscillator power consumption - 0.75 1.2 µA Table 42. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) -24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -72 MHz tLOCK PLL lock time - - 200(2) µs Jitter Cycle-to-cycle jitter - - 300(2) 2. Guaranteed by design, not tested in production. ps |
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