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STM32F303RE 数据表(PDF) 118 Page - STMicroelectronics

部件名 STM32F303RE
功能描述  ARM Cortex-M4 32b MCUFPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V
PDF  173 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F303RE 数据表(HTML) 118 Page - STMicroelectronics

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Electrical characteristics
STM32F303xD STM32F303xE
118/173
DocID026415 Rev 5
Note:
It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.
6.3.15
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 66 are derived from tests
performed under the conditions summarized in Table 19. All I/Os are CMOS and TTL
compliant.
IINJ
Injected current on PB0, PB1, PE7, PE8, PE9, PE10,
PE11, PE12, PE13, PE14, PE15, PB12, PB13, PB14,
P15, PD8, PD9, PD10, PD11, PD12, PD13, PD14 with
induced leakage current on other pins from this group
less than -50 µA or more than +400 µA
-5
+5
mA
Injected current on any other FT and FTf pins
-5
NA
Injected current on any other pins
-5
+5
Table 65. I/O current injection susceptibility (continued)
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
Table 66. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Low level input
voltage
TC and TTa I/O
-
-
0.3 VDD+0.07 (1)
V
FT and FTf I/O
-
-
0.475 VDD-0.2 (1)
BOOT0
-
-
0.3 VDD–0.3 (1)
All I/Os except BOOT0
-
-
0.3 VDD (2)
VIH
High level input
voltage
TC and TTa I/O
0.445 VDD+0.398 (1)
--
V
FT and FTf I/O
0.5 VDD+0.2 (1)
--
BOOT0
0.2 VDD+0.95 (1)
--
All I/Os except BOOT0
0.7 VDD (2)
--
Vhys
Schmitt trigger
hysteresis
TC and TTa I/O
-
200 (1)
-
mV
FT and FTf I/O
-
100 (1)
-
BOOT0
-
300 (1)
-



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