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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STGD6M65DF2 数据表(PDF) 6 Page - STMicroelectronics |
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STGD6M65DF2 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 20 page  Electrical characteristics STGD6M65DF2 6/20 DocID028703 Rev 3 Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 140 - ns Qrr Reverse recovery charge - 210 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 430 - A/µs Err Reverse recovery energy - 16 - µJ trr Reverse recovery time IF = 6 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 200 - ns Qrr Reverse recovery charge - 473 - nC Irrm Reverse recovery current - 9.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 428 - A/µs Err Reverse recovery energy - 32 - µJ |
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