STGD6M65DF2 datasheet(1/20 Pages) STMICROELECTRONICS

部件名	STGD6M65DF2

功能描述	Trench gate field-stop IGBT, M series 650 V, 6 A low loss

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 20 page

August 2016

DocID028703 Rev 3

1/20

This is information on a product in full production.

www.st.com

STGD6M65DF2

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 6 A



Tight parameter distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGD6M65DF2

G6M65DF2

DPAK

Tape and reel

类似零件编号 - STGD6M65DF2

制造商	部件名	数据表	功能描述
STMicroelectronics	STGD6NC60H	454Kb / 14P	N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT 08-Feb-2007
	STGD6NC60H-1	376Kb / 13P	N-channel 600 V, 7 A - IPAK Very fast PowerMESH™ IGBT 08-Apr-2014
	STGD6NC60HD	224Kb / 9P	N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT 14-Jun-2005
	STGD6NC60HD	467Kb / 15P	N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT 07-Feb-2007
	STGD6NC60HDT4	224Kb / 9P	N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT 14-Jun-2005

More results

类似说明 - STGD6M65DF2

制造商	部件名	数据表	功能描述
STMicroelectronics	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss 14-Oct-2015
	STGB4M65DF2	1Mb / 18P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss 21-Nov-2016
	STGF4M65DF2	983Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 4 A low loss 21-Nov-2016
	STGP6M65DF2	958Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 6 A low loss 03-Aug-2016
	STGW75M65DF2	1,005Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 75 A low loss 15-Jun-2016
	STGWA50M65DF2	971Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 50 A low loss 14-Jun-2016
	STGYA120M65DF2	958Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 120 A low loss 12-Aug-2016
	STGF6M65DF2	985Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 6 A low loss 05-Aug-2016
	STGP20M65DF2	520Kb / 16P	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT 08-Oct-2018
	STGD4M65DF2	448Kb / 20P	Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT 05-Dec-2018

More results

STGD6M65DF2 数据表(PDF) 1 Page - STMicroelectronics

STGD6M65DF2 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STGD6M65DF2

类似说明 - STGD6M65DF2

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STGD6M65DF2 数据表(PDF) 1 Page - STMicroelectronics

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类似零件编号 - STGD6M65DF2

类似说明 - STGD6M65DF2

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