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STGWA50M65DF2 数据表(PDF) 6 Page - STMicroelectronics |
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STGWA50M65DF2 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 16 page ![]() Electrical characteristics STGWA50M65DF2 6/16 DocID028694 Rev 2 Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 50 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 162 - ns Qrr Reverse recovery charge - 1.37 - µC Irrm Reverse recovery current - 19 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 420 - A/µs Err Reverse recovery energy - 192 - µJ trr Reverse recovery time IF = 50 A, VR = 400 V, VGE = 15 V, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 262 - ns Qrr Reverse recovery charge - 5.1 - µC Irrm Reverse recovery current - 34 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 160 - A/µs Err Reverse recovery energy - 676 - µJ |
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