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STGWA50M65DF2 数据表(PDF) 5 Page - STMicroelectronics |
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STGWA50M65DF2 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STGWA50M65DF2 Electrical characteristics DocID028694 Rev 2 5/16 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 50 A, VGE = 15 V, RG = 6.8 Ω (see Figure 29: " Test circuit for inductive load switching" ) 42 - ns tr Current rise time 21 - ns (di/dt)on Turn-on current slope 1942 - A/µs td(off) Turn-off-delay time 130 - ns tf Current fall time 104 - ns Eon(1) Turn-on switching energy 0.88 - mJ Eoff(2) Turn-off switching energy 1.57 - mJ Ets Total switching energy 2.45 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 50 A, VGE = 15 V, RG = 6.8 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 42 - ns tr Current rise time 24 - ns (di/dt)on Turn-on current slope 1700 - A/µs td(off) Turn-off-delay time 131 - ns tf Current fall time 184 - ns Eon(1) Turn-on switching energy 1.97 - mJ Eoff(2) Turn-off switching energy 2.22 - mJ Ets Total switching energy 4.19 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C 10 - µs VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C 6 - Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. |
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