STL13N60DM2

Electrical ratings

DocID029284 Rev 2

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

± 25

V

8(1)

A

5

A

IDM(2)

Drain current (pulsed)

32

A

52

W

dv/dt(3)

Peak diode recovery voltage slope

40

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

50

V/ns

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

150

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case max

2.40

°C/W

Thermal resistance junction-pcb max(1)

59

°C/W

Notes:

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetetive or not repetetive (pulse width limited by

2.5

A

340

mJ