STL13N60DM2 datasheet(5/15 Pages) STMICROELECTRONICS

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STL13N60DM2

Electrical characteristics

DocID029284 Rev 2

5/15

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 8 A

1.6

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

Qrr

Reverse recovery charge

252

IRRM

Reverse recovery current

5.6

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

170

Qrr

Reverse recovery charge

667

IRRM

Reverse recovery current

8.6

Notes:

(1)Pulse width is limited by safe operating area

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1 mA, ID = 0 A

±30

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

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