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TSU111 数据表(PDF) 10 Page - STMicroelectronics |
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TSU111 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 30 page ![]() Electrical characteristics TSU111 10/30 DocID029790 Rev 2 Symbol Parameter Conditions Min. Typ. Max. Unit trec Overload recovery time 100 mV from rail in comparator, RL = 100 kΩ, VΙD = ±1 V, -40 °C < T< 85 °C 940 µs EMIRR Electromagnetic interference rejection ratio (3) Vin = -10 dBm, f = 400 MHz 54 dB Vin = -10 dBm, f = 900 MHz 79 Vin = -10 dBm, f = 1.8 GHz 65 Vin = -10 dBm, f = 2.4 GHz 65 Notes: (1)Typical value is based on the Vio drift observed after 1000h at 85 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (2)Guaranteed by design (3)Based on evaluations performed only in conductive mode |
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