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TSU111 数据表(PDF) 5 Page - STMicroelectronics |
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TSU111 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 30 page ![]() TSU111 Electrical characteristics DocID029790 Rev 2 5/30 3 Electrical characteristics Table 3: Electrical characteristics at (VCC+) = 1.8 V with (VCC-) = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 1 MΩ connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage T = 25 °C 150 µV -40 °C < T< 85 °C 235 ΔVio/ΔT Input offset voltage drift -40 °C < T< 85 °C 1.4 μV/°C ΔVio Long-term input offset voltage drift T = 25 °C (1) TBD µV/√month Iio Input offset current (2) T = 25 °C 1 10 pA -40 °C < T< 85 °C 50 Iib Input bias current (2) T = 25 °C 1 10 -40 °C < T< 85 °C 50 CMR Common mode rejection ratio, 20 log (ΔVicm/ΔVio), Vicm = 0 to 1.8 V T = 25 °C 76 107 dB -40 °C < T< 85 °C 71 Avd Large signal voltage gain, Vout = 0.2 V to (VCC+) - 0.2 V RL = 100 kΩ, T = 25 °C 95 120 RL = 100 kΩ, -40 °C < T< 85 °C 90 VOH High-level output voltage, (drop from VCC+) RL = 10 kΩ, T = 25 °C 10 25 mV RL = 10 kΩ, -40 °C < T< 85 °C 40 VOL Low-level output voltage RL = 10 kΩ, T = 25°C 8 25 RL = 10 kΩ, -40 °C < T< 85 °C 40 Iout Output sink current, Vout = VCC , VΙD = -200 mV T = 25 °C 2.8 5 mA -40 °C < T< 85 °C 1.5 Output source current, Vout = 0 V, VΙD = 200 mV T = 25 °C 2 4 -40 °C < T< 85 °C 1.5 ICC Supply current (per channel), no load, Vout = VCC/2 T = 25 °C 900 1200 nA -40 °C < T< 85 °C 1480 AC performance GBP Gain bandwidth product RL = 1 MΩ, CL = 60 pF 10 kHz Fu Unity gain frequency 8 Φm Phase margin 60 degrees Gm Gain margin 10 dB SR Slew rate (10 % to 90 %) RL = 1 MΩ, CL = 60 pF, Vout = 0.3 V to (VCC+) - 0.3 V 2.5 V/ms en Equivalent input noise voltage f = 100 Hz 220 nV/√Hz ʃen Low-frequency, peak-to-peak input noise Bandwidth: f = 0.1 to 10 Hz 3.8 µVpp trec Overload recovery time 100 mV from rail in comparator, RL = 100 kΩ, VΙD = ±1 V, -40 °C < T< 85 °C 325 µs |
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