EEPROM

AS28C010

AS28C010

Rev. 1.7 01/12

Micross Components reserves the right to change products or specifications without notice.

10

OE\*

CE\

WE\

ADDRESS **

I/O

BYTE 0

BYTE 1

BYTE 2

BYTE n

BYTE n+1

BYTE n+2

LAST BYTE

* Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\

HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively

performing a polling operation.

2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform

to either CE\ or WE\ controlled write cycle timing.

PAGE WRITE CYCLE