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2SD1202 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1202 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1202 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V ICES Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 400V;IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 20 mA hFE-1 DC Current Gain IC= 5A; VCE= 3V 750 hFE-2 DC Current Gain IC= 10A; VCE= 3V 100 VECF C-E Diode Forward Voltage IF= 10A 2.8 V |
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