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2SD1202 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 2SD1202
功能描述  Silicon NPN Darlington Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SD1202 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1202
DESCRIPTION
·
Low Collector Saturation Voltage
·
High DC Current Gain
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High ruggedness electronic ignitions
·
High voltage ignition coil driver
·
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
10
A
ICM
Collector Current-peak
20
A
IB
Base Current
1
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W


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