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71321LA55PFG 数据表(PDF) 9 Page - Integrated Device Technology |
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71321LA55PFG 数据表(HTML) 9 Page - Integrated Device Technology |
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9 / 17 page  6.42 IDT71321SA/LA and IDT71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges 9 AC Electrical Characteristics Over the Operating Temeprature and Supply Voltage Range(4) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but is not production tested. 2. For Master/Slave combination, tWC = tBAA + tWP, since R/ W = VIL must occur after tBAA . 3. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 4. 'X' in part numbers indicates power rating (SA or LA). Symbol Parameter 71321X20 71421X20 Com'l Only 71321X25 71421X25 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time(2) 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns tWP Write Pulse Width(3) 15 ____ 15 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 12 ____ ns tHZ Output High-Z Time(1) ____ 10 ____ 10 ns tDH Data Hold Time 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z (1) ____ 10 ____ 10 ns tOW Output Active from End-of-Write(1) 0 ____ 0 ____ ns 2691 tbl 09a Symbol Parameter 71321X35 71421X35 Com'l Only 71321X55 71421X55 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time(2) 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write 30 ____ 40 ____ ns tAW Address Valid to End-of-Write 30 ____ 40 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns tWP Write Pulse Width(3) 25 ____ 30 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 20 ____ ns tHZ Output High-Z Time(1) ____ 15 ____ 25 ns tDH Data Hold Time 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1) ____ 15 ____ 30 ns tOW Output Active from End-of-Write(1) 0 ____ 0 ____ ns 2691 tbl 09b |
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