IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

Symbol

Test

Conditions

Characteristic

Values

(T

J

=

25

°C, unless otherwise specified)

min.

typ. max.

g

fs

V

I

pulsed

TBD

S

C

iss

48

nF

C

oss

V

GS

=0V,

V

f=1

MHz

8.8

nF

C

rss

3.1

n F

t

d(on)

210

n s

t

r

V

V

I

500

ns

t

d(off)

R

G

= 1

Ω (External)

900

n s

t

f

350

n s

Q

g

2090

n C

Q

gs

V

V

I

385

n C

Q

gd

1045

n C

R

thJC

0.05 6K/W

R

thJK

with 30

µm heat transfer paste

0.08 3K/W

Source-Drain

Diode

Characteristic

Values

(T

J

=

25

°C, unless otherwise specified)

Symbol

Test

Conditions

min.

typ. max.

I

S

V

385

A

I

SM

Repetitive;

pulse

width

limited

by

T

JM

1540

A

V

SD

I

V

0.9

1.2

V

Pulse

test,

t

≤300µs, duty cycle d≤2%

t

rr

I

F

=

I

-di/dt

=

1200

A/

Dimensions in mm (1 mm = 0.0394")

VMO 380-02 F