IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

VMO 380-02 F

Fig. 7 Typical turn-on gate charge characteristics

Fig. 8 Forward Bias Safe Operating Area, I

p

Fig. 11 Drain current versus pulse width and

Fig. 12 Transient thermal resistance Z

duty cycle

Fig. 9 Typical capacitances C = f (V

Fig. 10 Typical forward characteristics of reverse

diode, I

0.0001

0.001

0.01

0.1

1

0

100

200

300

400

500

600

700

800

900

1000

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

100

1000

10

100

1000

10000

Z

thJK

D=0.01

D=0.02

D=0.05

D= 0.1

D= 0.2

D = 0.5

s

K/W

0

500

1000

1500

2000

2500

3000

0

3

6

9

12

15

V

GS

V

I

D

A

Limited by R

DS(on)

t = 100 ms

t = 10 ms

V

DS

V

t

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0

200

400

600

800

1000

1200

T

T

V

A

0

5

10

15

20

25

1

10

100

1000

nF

V

SD

I

S

C

oss

V

DS

V

C

I

I

V

Q

g

nC

t = 1 ms

non-repetitive

T

T

C

iss

C

rss

D = single pulse

0

t

p

s

I

d

D= 0.1

D= 0.2

D= 0.3

D= 0.4

D= 0.5

D= 0.7

T