Axial Lead Schottky Diode

Rev. V1

1N5819

1

1

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1

Features

 High Reverse Breakdown Voltage: 30 V

 Hermetically Sealed Glass, DO-7

 Flexible Axial-lead Mounting Terminals

 RoHS* Compliant

Description

The 1N5819 silicon Schottky diode offers a large

reverse breakdown voltage with low forward voltage.

The die, which is passivated with an advanced

high-reliability passivation for very fast settling time

and low leakage current, is packaged in the industry

standard DO-7 hermetically sealed axial leaded

glass package.

This rugged device is capable of reliable operation in

all military, commercial and industrial applications.

The 1N5819 is designed to be used in wide variety

of applications, such as in high frequency rectifiers,

reverse polarity protection and more.

* Restrictions on Hazardous Substances,

European Union Directive 2011/65/EU.

Hermetically Sealed Glass, DO-7

Parameter

Test Conditions

Units

Min.

Typ.

Max.

V

30

—

—

µA

mA

—

—

500

10

mV

—

550

—

pF

—

110

—

Part Number

Package

1N5819-R

3000 piece reel

1N5819-B

100 piece bulk in bag

1N5819-FP

50 piece per flat pack

Static and Moisture Sensitivity

These

electronic

devices

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these HBM Class 0

devices. The moisture sensitivity level is MSL 1.

Environmental Capabilities

These electronic devices are capable of meeting the

environmental requirements of MIL-STD-750 and

MIL-STD-883.