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Silicon Hyperabrupt Varactor Diode

Rev. V1

MHV507-19-1

Features

 High Capacitance Ratio: 3 Minimum

 High Quality Factor: 1500 Typical

 Compact Surface Mount Package

 Ultra-thin Termination Plating to Combat

Embrittlement

 RoHS* Compliant

Description

The

MHV507-19-1

silicon

hyperabrupt

tuning

varactor

offers

a

large

change

in

junction

capacitance over a small tuning voltage range. It is a

mesa device with an epitaxial-deposited cathode

layer for low series resistance and high quality

factor. The die is passivated with a high-reliability

glass passivation for very fast settling time. This

varactor

diode

is

packaged

in

an

epoxy-

encapsulated surface mount package.

The MHV507-19-1 is ideally suited for voltage

controlled filters, analog voltage controlled phase

shifters and voltage controlled oscillators.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

V

22

—

—

nA

—

—

50

pF

9.20

3.20

0.75

10.2

3.5

1.0

11.2

3.8

1.4

Capacitance Ratio

Ratio

3.0

—

5.5

—

—

1500

—

Absolute Maximum Ratings

Parameter

Absolute Maximum

Reverse DC Voltage

22 V

Forward DC Current

50 mA

Assembly Temperature

+260°C, 10 seconds

Operating Temperature

-55°C to +85°C

Storage Temperature

-55°C to +100°C

Ordering Information

Part Number

Package

MHV507-19-1-W

100 piece waffle pack

MHV507-19-R

3000 piece reel