BLS3135-50 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 Aug 16

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-50

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.5 GHz.

(2) f = 3.3 GHz.

(3) f = 3.1 GHz.

Fig.2

Load power as a function of drive power;

typical values.

handbook, halfpage

PD (W)

(W)

MCD758

(2)

(3)

(1)

Fig.3

Power gain as a function of load

power; typical values.

VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.

(1) f = 3.5 GHz.

(2) f = 3.3 GHz.

(3) f = 3.1 GHz.

handbook, halfpage

(3)

(1)

(2)

(dB)

−2

PL (W)

MCD759

Fig.4

Collector efficiency as a function of load

power; typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.5 GHz.

(2) f = 3.3 GHz.

(3) f = 3.1 GHz.

handbook, halfpage

ηC

(%)

PL (W)

MCD760

(3)

(1)

(2)

Fig.5

Power gain and input return losses as

functions of frequency; typical values.

VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.

handbook, halfpage

3.0

3.5

3.1

(dB)

f (GHz)

3.2

3.3

Return

Losses

(dB)

3.4

MCD761

Return

Losses

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