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BLS3135-50 数据表(PDF) 5 Page - NXP Semiconductors |
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BLS3135-50 数据表(HTML) 5 Page - NXP Semiconductors |
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5 / 8 page ![]() 1999 Aug 16 5 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 handbook, full pagewidth MCD762 30 30 40 output input C1 C2 Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit. Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric ( εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = C2 = ATC 100A 5.1 pF |
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