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BCP53 数据表(PDF) 1 Page - ON Semiconductor |
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BCP53 数据表(HTML) 1 Page - ON Semiconductor |
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1 / 5 page ![]() © Semiconductor Components Industries, LLC, 2015 December, 2015 − Rev. 12 1 Publication Order Number: BCP53T1/D BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Device Marking: BCP53T1G = AH BCP53−10T1G = AH−10 BCP53−16T1G = AH−16 • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc Collector−Base Voltage VCBO −100 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25 °C PD 1.5 12 W mW/ °C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W Lead Temperature for Soldering, 0.0625 ″ from case Time in Solder Bath TL 260 10 °C s Device Package Shipping† ORDERING INFORMATION SOT−223 CASE 318E STYLE 1 MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS MARKING DIAGRAM BCP53T1G SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com BCP53−16T1G SOT−223 (Pb−Free) 1000/Tape & Reel BCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel BCP53−16T3G SOT−223 (Pb−Free) 4000/Tape & Reel 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package AYW XXXXX G G (Note: Microdot may be in either location) SBCP53−16T1G SOT−223 (Pb−Free) 1000/Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000/Tape & Reel 1 BASE EMITTER 3 COLLECTOR 2, 4 1 2 4 3 NSVBCP53−16T3G SOT−223 (Pb−Free) 4000/Tape & Reel |
类似零件编号 - BCP53_16 |
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类似说明 - BCP53_16 |
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