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BCP53 数据表(PDF) 2 Page - ON Semiconductor

部件名 BCP53
功能描述  PNP Silicon Epitaxial Transistors
PDF  5 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BCP53 数据表(HTML) 2 Page - ON Semiconductor

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BCP53 Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−100
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−80
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
−100
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
ICBO
−
−
−100
nAdc
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
IEBO
−
−
−10
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16, NSVBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
−
−
− 0.5
Vdc
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−
−
−1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
−
50
−
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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