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LETH3W 数据表(PDF) 3 Page - OSRAM GmbH |
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LETH3W 数据表(HTML) 3 Page - OSRAM GmbH |
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3 / 19 page ![]() LE A H3W, LE T H3W, LE B H3W 2010-03-03 3 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit amber true green blue Betriebstemperatur* Operating temperature range* T board, op – 40 … + 85 °C Lagertemperatur Storage temperature range T board, stg – 40 … + 85 °C Sperrschichttemperatur Junction temperature T j 125 °C Durchlassstrom pro Chip DC Forward current per chip DC ( T board =25°C) I F 1000 mA Stoßstrom pro Chip DC Surge current per chip DC t ≤ 10 μs, D = 0.1; T A=25°C I FM 2000 mA Sperrspannung pro Chip DC Reverse voltage per chip DC ( T board=25°C) V R 0.5 V Sperrstrom pro Chip DC Reverse current per chip DC V R = 0.5 V I R 10 mA * Eine Betauung des Moduls muss vermieden werden. Condensation on the module has to be avoided. |
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