IR2214 datasheet(15/28 Pages) IRF

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IR2214/IR22141(SS)

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ADVANCE DATA

The undervoltage on the V

BS works disabling only

the floating driver. Undervoltage on V

BS does not

prevent the low side driver to activate its output

nor generate diagnostic signals. V

BS undervoltage

condition (V

BS < UVVBS-) latches the high side

output stage in the low state. V

BS must be

reestablished higher than UV

VBS+ to return in

normal operating mode. To turn on the floating

driver H

IN must be re-asserted high (rising edge

event on H

IN is required).

4.2 Power devices desaturation

Different causes can generate a power inverter

failure: phase and/or rail supply short-circuit,

overload conditions induced by the load, etc…

In all these fault conditions a large current

increase is produced in the IGBT.

The IR2214 fault detection circuit monitors the

IGBT emitter to collector voltage (V

CE) by means

of an external high voltage diode. High current in

the IGBT may cause the transistor to desaturate,

i.e. V

CE to increase.

Once in desaturation, the current in power

transistor can be as high as 10 times the nominal

current. Whenever the transistor is switched off,

this high current generates relevant voltage

transients in the power stage that need to be

smoothed out in order to avoid destruction (by

over-voltages). The IR2214 gate driver accomplish

the transients control by smoothly turning off the

desaturated transistor by means of the SSD pin

activating a so called Soft ShutDown sequence

(SSD).

4.2.1 Desaturation detection: DSH/L function

Figure 13 shows the structure of the desaturation

sensing and soft shutdown block. This configu-

ration is the same for both high and low side

output stages.

Figure 13:

high and low side output stage

tBL

Blanking

VB/Vcc

HON/LON

DSH/L

VS/COM

HOP/LOP

tss

One Shot

VDESAT

(ton1)

ONE

SHOT

tDS

filter

SSDH/L

Prre

Drriivve

err

sensing

diode

on/off

DesatHS/LS

desat

comparator

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