MB91F577CSPMC datasheet(155/163 Pages) CYPRESS

155 / 163 page

Document Number: 002-04725 Rev.*A

Page 155 of 163

MB91570 Series

13.7 Flash memory

13.7.1

Electrical characteristics

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

–

200

800

8 Kbyte sector*

excluding internal preprogramming time

–

300

1100

8 Kbyte sector*

including internal preprogramming time

–

400

2000

64 Kbyte sector*

excluding internal preprogramming time

–

700

3700

64 Kbyte sector*

including internal preprogramming time

8-bit writing time

–

288

µs

Exclusive of overhead time at

system level*

16-bit writing time

–

384

µs

Exclusive of overhead time at

system level*

ECC writing time

–

288

µs

Exclusive of overhead time at

system level*

Erase cycle*

Data retain time

1,000 cycles/

20 years,

10,000 cycles/

10 years,

100,000 cycles/

5 years

–

Average TA = +85°C*

*1: The guaranteed value for erasure up to 100,000 cycles.

*2: Number of erase cycles for each sector.

*3: This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into

normalized value at + 85°C).

13.7.2

Notes

While the Flash memory is written or erased, shutdown of the external power (VCC5) is prohibited.

In the application system where VCC5 might be shut down while writing or erased, be sure to turn the power off by using an external

low-voltage detection function.

To put it concretely, after the external power supply voltage falls below the detection voltage (VDL

*1), hold V

CC5 at 2.7V or more

within the duration calculated by the following expression:

*1[µs] + (period of PCLK [µs] × 257) + 50 [µs]

*1: See “13.4. AC characteristics, 13.4.10. Low voltage detection (External low-voltage detection)”.

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